摘要
采用射频磁控反应溅射法和热退火处理制备了纳米Si/SiNx超晶格薄膜材料。把薄膜作为可饱和吸收体插入激光二极管泵浦的平凹腔Nd∶YVO4激光器内,实现了1 342 nm激光的被动调Q运转,获得脉冲宽度约20 ns、重复频率33.3 kHz的调Q脉冲序列输出。分析了纳米Si/SiNx薄膜可饱和吸收的产生机制,认为双光子吸收是产生1 342 nm激光被动调Q的主要原因。对纳米Si/SiNx薄膜材料调Q激光器的速率方程组进行了数值求解,得到的调Q脉冲时间宽度的理论值和实验结果基本相符。
The nc-Si/SiNx superlattice films were prepared by radio-frequency（RF） magnetron sputtering method and thermal annealing techinque.The passively Q-switched operation of a LD pumped Nd∶YVO4 1 342 nm laser was achieved by inserting the nc-Si/SiNx film as a saturable absorber into the plane-concave resonator.The pulse train with average pulse duration of 20 ns and pulse repetition rate of 33.3 kHz was obtained.The passively Q-switching mechanism of 1 342 nm laser was analyzed and it was mainly ascribed to the two-photon saturable absorption of the film.The pulse duration of Q-switched pulse was numerically calculated from the rate equations of the passively Q-switched laser with nc-Si/SiNx film,which was consistent with the experimental results.
出处
《半导体光电》
CAS
CSCD
北大核心
2011年第1期88-91,共4页
Semiconductor Optoelectronics
基金
福建省自然科学基金项目(2009J01291)
