摘要
The characteristic impedances of L-type and T-type networks are first investigated for a distributed amplifier design.The analysis shows that the L-type network has better frequency characteristics than the T-type one.A distribution amplifier based on the L-type network is implemented with the 2-μm GaAs HBT（heterojunction-bipolar transistor） process of WIN semiconductors.The measurement result presents excellent bandwidth performance and gives a gain of 5.5 dB with a gain flatness of ±1dB over a frequency range from 3 to 18 GHz.The return losses S11 and S22 are below-10dB in the designed frequency range.The output 1-dB compression point at 5 GHz is 13.3 dBm.The chip area is 0.95 mm2 and the power dissipation is 95 mW under a 3.5 V supply.
首先对分布式放大器中L型和T型网络的频率特性进行了研究.分析表明,L型网络比T型网络在设计中具有更好的频率特性.基于稳懋半导体的2-μm GaAs HBT工艺实现了一种L型网络的分布式放大器.测试结果表明,在3～18GHz频率范围内其增益为5.5dB,增益平坦度为±1dB,体现了很好的带宽性能.此外,在设计的频率范围内反射损耗S11,S22均低于-10dB.在5GHz时的1dB压缩点处输出功率为13.3dBm.芯片面积为0.95mm2,在3.5V电源下功耗为95mW.
基金
China Postdoctoral Science Foundation (No.20090461048)
Postdoctoral Science Foundation of Jiangsu Province (No.0901022C)
Postdoctoral Science Foundation of Southeast University
