Co薄膜的稳定性和室温相观察

OBSERVATION OF THE STABILITY AND ROOM TEMPERATURE( R T) PHASES OF Co THIN FILM ON Si (001) SUBSTRATE

用电镜对 Ｓｉ （００１） 基体上的 Ｃｏ 薄膜的室温相和稳定性进行了观察， 高分辨像和小角解理的电子衍射结果均表明： 室温下， Ｃｏ 薄膜不发生反应， 室温相为α Ｃｏ， 没有硅化物形成． Ｃｏ 薄膜在经过３００ ℃２ｈ 退火后， 薄膜发生部分凝聚现象， 凝聚团由硅化物组成． ３００ ℃退火后薄膜由 Ｃｏ２ Ｓｉ 和 Ｃｏ Ｓｉ

The stability and R Tphases of Co thin film on Si (001) substrate have been investigated by T E M. The results of H R E M and S A D (selected area diffraction) of small angle cleavage definitely showedthat atroom te mperature only α Co phase existed in Co thin film ,and no reaction betw een Co thin film and Si(001) substrate occurred . After annealing for 2 hours at 300 ℃partial agglom eration on thin film was ob served , which consisted of Co2 Si and Co Si.