基于Ⅲ-Ⅴ与Ⅱ-Ⅵ族半导体材料色散特性的高灵敏度慢光干涉仪

High sensitivity slow light interferometer based on dispersive property of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductor materials

分析了Ⅲ-Ⅴ与Ⅱ-Ⅵ族半导体材料的光学特性,证明半导体慢光介质不但可以提高干涉仪的光谱灵敏度,而且可以获得远大于气体慢光介质的工作光谱范围.实验证明,基于慢光介质GaAs的干涉仪光谱灵敏度相对于传统的干涉仪提高约3.2倍.

We investigate the optical properties of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors.The results show that the sensitivity of the interferometer can be greatly enhanced by the dispersive property of semiconductor.Furthermore,the analyses show that the semiconductor slow light medium has a more wider working spectral range than gas slow light medium.Moreover,we experimentally demonstrate that the sensitivity of the interferometer based on the semiconductor GaAs is 3.2 times higher than those of traditional interferometers.