有机光电器件ITO阳极表面改性及其时效性研究

Surface Modification of Indium-Tin-Oxide Anode for Organic Optoelectronic Devices

采用射频氧等离子体(RFOP)处理对氧化铟锡(ITO)薄膜表面进行改性,通过原子力显微镜、X射线光电子能谱、X射线衍射仪和接触角仪等测试表征,研究了改性对ITO表面性质的影响。实验结果表明,RFOP处理优化了ITO表面的化学组分,提高了ITO表面的平整度,改善了ITO表面的物理化学性质。同时,通过接触角监测和表面能计算,研究了ITO表面RFOP改性的时效性,结果证实,ITO表面优化后的物理化学性质随存放时间增加而逐渐退化。另外,采用改性后不同存放时间的ITO衬底作为阳极,制备了有机发光器件,通过测量光电特性,进一步研究了ITO表面性质对器件性能的影响。

The indium-tinoxide（ITO） films coated on glass were surface modified by RF oxygen plasma irradiation.The microstructures and properties of the surface-modified ITO films were characterized with X-ray diffraction（XRD）,X-ray photoelectron spectroscopy,atomic force microscopy（AFM）,and conventional surface probes.The results show that the surface modification significantly improves the microstructures and properties of the ITO films.For instance,oxygen plasma considerably reduced the hydrocarbon contamination,flattened the surface roughness,optimized the surface stoichiometries,and improved the surface physicochemical properties.However,the exposure to air of the modified films inversely affects its properties;its favorable properties deteriorate with an increase of the storage time.A prototyped organic light-emitting device was fabricated with the surface-modified ITO anodes,and the impacts of the surface properties on the device characteristics were also evaluated.