纳米硅管的掺杂

Doping of silicon nanotubes

掺杂可以提高纳米硅管的高温稳定性及物理性能,从而制备出实用的纳米硅管基电子器件.系统地论述了钴、铁、锰、镍、铍、硼及磷等元素在掺杂纳米硅管方面的理论研究现状与进展.

High temperature stability and physical properties of silicon nanotubes can be improved by doping so as to prepare practical silicon nanotube-based electron devices. The research situation and development on the theory of silicon nanotubes doped by Co, Fe, Mn, Ni, Be, B and P are introduced in detail and the development on the experimental doping of silicon nanotubes by B, Ge and Be is also demonstrated in the paper.