摘要
利用模板法制备了单根ZnO纳米线半导体器件,得到了具有欧姆接触的电极,对器件进行了湿敏测试,通过测得的I-V曲线及响应恢复特性曲线剖析其敏感机理.
A semiconductor device based on a single ZnO nanowire was fabricated.The ohmic electrode was synthesized by the template method.By testing the I-V curve and answer-recover curve for vapor, the mechanism of the device was analyzed.
出处
《哈尔滨师范大学自然科学学报》
CAS
2010年第3期50-52,共3页
Natural Science Journal of Harbin Normal University
基金
哈尔滨师范大学第四届创新基金资助项目