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单根ZnO纳米线半导体器件的制备及湿敏特性研究 被引量:1

Research on Fabrication and Moisture Sensitivity of Device Based on a Single ZnO Nanowire a Semiconductor
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摘要 利用模板法制备了单根ZnO纳米线半导体器件,得到了具有欧姆接触的电极,对器件进行了湿敏测试,通过测得的I-V曲线及响应恢复特性曲线剖析其敏感机理. A semiconductor device based on a single ZnO nanowire was fabricated.The ohmic electrode was synthesized by the template method.By testing the I-V curve and answer-recover curve for vapor, the mechanism of the device was analyzed.
机构地区 哈尔滨师范大学
出处 《哈尔滨师范大学自然科学学报》 CAS 2010年第3期50-52,共3页 Natural Science Journal of Harbin Normal University
基金 哈尔滨师范大学第四届创新基金资助项目
关键词 ZNO 敏感元件 吸附 ZnO Sensor Adsorption
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