掺硼金刚石膜的制备及其应用

Preparation and applications of boron-doped diamond films

金刚石虽然具有极为优异的性能,如具有很大的能隙,高的电子迁移率、空穴迁移率和高热导率,以及负的电子亲和势,但要将它用于半导体材料时还不能直接使用,必须要先进行金刚石的P型和n型掺杂。因此,研究金刚石的P型和n型掺杂具有很重要的现实意义。在金刚石薄膜中掺杂时,一般是掺入硼原子以实现P型掺杂,掺入氮原子或磷原子以实现n型掺杂。然而,由于N和P在金刚石中的施主能级太深,现在n型掺杂金刚石薄膜制备尚不成功,这是金刚石实用化的障碍。本文介绍了金刚石膜掺硼目的、方法和制备,总结了掺硼金刚石膜在微电子、电化学、光电子、工具等领域应用状况以及存在问题。

Although diamond has a very excellent performance,such as large energy gap,high electron mobility,high hole mobility,high thermal conductivity,negative electron affinity and so on,it is unable to be applied directly to semiconductor materials unless the p-type and n-type doping have both been done for it.Therefore,the study on p-type doping and n-type doping is of practical importance to diamond films.Generally,the p-type doping is achieved by doping of boron atoms,while the n-type doping is achieved by doping of nitrogen or phosphorus atoms.However,because the donor level of nitrogen or phosphorus in diamond is too deep,the n-type doped diamond film is unsuccessful until now and becomes an obstacle to the application of diamond.Describes the aim and method of boron doping and preparation of boron-doped diamond films in detail,with their applications and existing problems found in the fields of microelectronics,electrochemistry,optoelectronics and tools summarized.