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基于整流特性的RRAM无源交叉阵列研究进展 被引量：4

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摘要 阻变存储器(resistance random access memory,RRAM)无源交叉阵列由于其结构简单、密度高、易3D集成等优点而得到广泛的关注,是RRAM实现高存储密度的一种极具应用前景的集成方案.但是无源交叉阵列中的串扰问题限制了其发展与应用.本文从阻变存储器的集成、无源交叉阵列中的串扰现象出发,综述了应用在无源交叉阵列中的1D1R结构(one diode one resistor)和具有自整流效应的1R结构(one resistor),这2种结构在一定程度上都能够抑制串扰现象的出现,从而避免误读.与有源阵列相比,必须对无源交叉阵列发展一套行之有效的测试方法才能够正确地评估其性能并实现商业应用,综述了当前无源交叉阵列常用的操作电压配置方案.最后,展望了RRAM无源交叉阵列的应用前景.
作者 张康玮 龙世兵 刘琦 吕杭炳 李颖弢 王艳 连文泰 王明 张森 刘明
机构地区 中国科学院微电子研究所纳米加工与新器件集成技术实验室
出处 《中国科学：技术科学》 EI CSCD 北大核心 2011年第4期403-411,共9页 Scientia Sinica(Technologica)
基金 国家重点基础研究发展计划("973"计划)(批准号:2011CB309602 2010CB934200 2008CB925002) 国家自然科学基金(批准号:60825403 50972160) 国家高技术研究发展计划("863"计划)(批准号:2009AA03Z306) 国家科技重大专项(批准号:2009ZX02023-005-4)资助项目
关键词 整流特性 无源交叉阵列 阻变存储器 1D1R 自整流
分类号 TP333 [自动化与计算机技术—计算机系统结构]
  • 相关文献

参考文献37

  • 1Tehrani S. Status and outlook of MRAM memory technology (Invited). IEDM Tech Dig, San Francisco, USA, 2006.
  • 2Koh G H, Hwang Y N, Lee S H, et al. PRAM process technology. Iut Conf Integrated Circuit Design Technol, Austin, Texax, 2004.
  • 3Hsu S T, Li T K, Awaya N. Resistance random acess memory switching mechanism. J Appl Phys, 2007, 101:02451 7.
  • 4Zhuang W W, Pan W, Ulrich B D, et al. Novell colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM). IEDM Tech Dig, San Francisco, USA, 2002.
  • 5Scott J C. Is there an immortal memory? Science, 2004, 304:62-63.
  • 6Lee M J, Park Y, Kang B S, et al. 2-stack ID-IR cross-point structure with oxide diodes as switch elements for high density resistance RAM applications. IEDM Tech Dig, Washington D C, USA, 2007.
  • 7Chen Y C, Chen C F, Chen C T, et al. An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device. IEDM Tech Dig, Washington D C, USA, 2003.
  • 8Chen A, Haddad S, Wu Y C, et al. Non-volatile resistive switching for advanced memory applications. IEDM Tech Dig, Washington D C, USA, 2005.
  • 9Wang C H, Tsai Y H, Lin K C, et al. 3-Dimensional 4F2 ReRAM cell with CMOS compatible logic process. IEDM Tech Dig, San Francisco, USA, 2010.
  • 10Servalli G. A 45 nm generation phase change memory technology. IEDM Tech Dig, 2009, 113-116.

二级参考文献41

  • 1张丽伟,卢景霄,段启亮,王海燕,李瑞,靳锐敏,王红娟,张宇翔.磁控溅射法制备AZO薄膜的工艺研究[J].电子元件与材料,2005,24(8):46-48. 被引量：15
  • 2Tsukimoto S, Moriyama M, Masanori M. Microstructure of amorphous tantalum nitride thin films. Thin Solid Films, 2004, 460(1-2): 222-226
  • 3Wu Y Y, Eizenberg M. Effects of thermal treatment on structures of Cu/atomic-layer-deposited TaN films/Si stacks. Thin Solid Films, 2006, 514(1-2): 33-44
  • 4Lin S T, Lee C. Characteristics of sputtered Ta-B-N thin films as diffusion barriers between copper and silicon. Appl Surf Sci, 2006, 253(3): 1215-1221
  • 5Liu Y Z, Song S X, Mao D L, et al. Diffusion barrier performance of reactively sputtered Ta-W-N between Cu and Si. Microelectron Eng, 2004, 75(3): 309-315
  • 6Hubner R, Hecker M, Mattern N, et al. Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO2. Thin Solid Films, 2003, 437(1-2): 248-256
  • 7Makinoa Y, Moria M, Miyake S, et al. Characterization of Zr-Al-N films synthesized by a magnetron sputtering method. Surf Coat Tech, 2005, 193(1-3): 219-222
  • 8Bae J W, Lira J W, Mimura K, et al. Ion beam deposition of α-Ta films by nitrogen addition and improvement of diffusion barrier property. Thin Solid Films, 2007, 515(11): 4768-4773
  • 9Song Z X, Xu K W, Chen H. The Effect of nitrogen partial pressure on Zr-Si-N diffusion barrier. Microelectron Eng, 2004, 71(1): 28-33
  • 10Violet P, Blanquet E, Bacq O. Density functional study of the stability and electronic properties of TaxNy compounds used as copper diffusion barriers. Microelectron Eng, 2006, 83(11-12): 2077-2081

共引文献16

同被引文献38

  • 1Waser R, Dittmann R, Staikov G, et al. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges. Adv Mater, 2009, 21: 2632-2663.
  • 2Ha S D, Ramanathan S. Adaptive oxide electronics: A review. J Appl Phys, 2011, 110: 071101.
  • 3Bai W L, Huang R, Cai Y M, et al. Record Low-Power Organic RRAM With Sub-20-nA Reset Current. IEEE Electron Device Lett, 2013, 34: 223-225.
  • 4Chen G, Song C, Chen C, et al. Resistive switching and magetic modulation in Cobalt doped ZnO. Adv Mater, 2012, 24: 3515-3520.
  • 5Prakash A, Park J, Song J, et al. Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering. IEEE Electron Device Lett, 2015, 36: 32-34.
  • 6Son J Y, Kim C H, Cho J H, et al. Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors. ACS Nano, 2010, 4: 3288-3292.
  • 7Zuo Q, Long S, Yang S, et al. ZnO-based memory cell with a self-rectifying effect for crossbar WORM memory application. IEEE Electron Device Lett, 2010, 31: 344-346.
  • 8Ye C, Deng T F, Wu J J, et al. Role of ITO electrode in the resistive switching behavior of TiN/HfO2/ITO memory devices at different annealing temperatures. Jpn J Appl Phys, 2015, 54: 054201.
  • 9Wang S Y, Tsai C H, Lee D Y, et al. Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application. Microelectronic Eng, 2011, 88: 1628-1632.
  • 10Strukov D B, Snider G S, Stewart D R, et al. The missing memristor found. Nature, 2008, 453: 80-83.

引证文献4

二级引证文献2

中国科学：技术科学
2011年 第4期

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