摘要
LED芯片的外量子效率受到芯片结构、荧光粉材料等多种因素的影响,其中主要原因之一就是背部金属反射层的反射率限制了出光效率。本论文提出了一种多层介质光的回归反射层结构,就是在芯片背部衬底采用这种高反射多层介质膜作为回归反射层,代替金属反射层,由于这种高反射多层介质膜比金属反射层可将LED芯片的背部蓝光的反射率提高8%～9%,可以有效地提高LED的外量子效率。
The external quantum efficiency of the LED chips is related to the chip structure,the phosphor materials and some other factors one,of which is that the reflectivity of back metal reflective layer limits the light-extracting efficiency.This paper puts forward a light recursive-reflective chip structure to replace the metal reflector by using this high reflectivity multilayer film as a recursive-reflective layer.Compared with the metal reflective layer,the high reflectivity multilayer film can increase the back reflectivity of the blue light by 8% ～ 9% ,which can effectively improve the LED external quantum efficiency.
出处
《照明工程学报》
北大核心
2010年第5期86-88,共3页
China Illuminating Engineering Journal
