基于反常霍尔效应的薄膜磁滞回线测量系统的原理与设计

Principle and design of film hysteresis loop measurement system based on abnormal Hall effect

随着制备工艺和要求的提高,磁性薄膜样品的厚度越来越薄,采用传统的测量方法难以准确测量其磁滞回线。本文探讨反常霍尔效应产生原理,提出了一种新的磁滞回线测量方法,以反常霍尔效应所产生的反常霍尔电压与薄膜样品的磁化强度成正比为测量原理,采用四探针测量方式,在薄膜样品表面水平通以恒定电流后,测量其垂直方向的反常霍尔电压,从而最终绘制样品的磁滞回线。大量实验表明,该测量方法稳定可靠,精度较高,符合测量要求。

With the improvement of technology and requirement of film manufacturing,the thickness of film is thinner and thinner,which cause the measurement of hysteresis loop using traditional methods more and more difficult.This paper discussed the theory of the abnormal Hall effect,then proposed a new measurement method,based on the theory that the abnormal Hall voltage is proportional to the magnetization of the film sample.The system used four-probe,supplied two of them a constant current on the surface of the film sample,tested the other two＇s voltage,then finished the hysteresis loop.The result meets the requirement of measurement with high precision and stability.