诱发单粒子多位翻转的电荷分享研究

Study on Charge Sharing and Multiple-Bit Upset

针对TSMC 0.18μm CMOS工艺分析了高能粒子入射漏区以及周围区域时NMOS管的电荷分享和电荷收集情况,并定量评估了节点隔离对电荷分享的影响。研究结果表明器件周围的区域比漏区更容易诱发多位翻转,因为高能粒子在器件周围区域产生的电子-空穴对在扩散作用下更容易到达各相邻灵敏单元,进而诱发多位翻转;节点隔离可以抑制电荷在相邻灵敏单元间的扩散,能够有效降低电荷收集和多位翻转。

It simulates charge sharing and charge collection between adjacent devices.Simulation results show that charge sharing is mainly affected by charge diffusion and areas between adjacent devices are more sensitive to MBU than drain area.Charge sharing and MBU can be mitigated by nodal separation.