结终端采用JTE保护技术的4H-SiC PiN二极管模拟和研制(英文)

Simulation and Fabrication of High-Voltage 4H-SiC PiN Diode with JTE

利用二维器件模拟软件ISE-TCAD 10.0,对结终端采用结扩展保护技术的4H-SiC PiN二极管平面器件进行反向耐压特性的模拟,并获得许多有价值的模拟数据.依据所得的模拟数据进行此种二极管器件的研制.实验测试表明,此二极管的模拟优化数据与实验测试的结果一致性较好,4H-SiC PiN二极管所测得到的反向电压达1 600 V,该反向耐压数值达到理想平面结的击穿耐压90%以上.

Reverse voltage characterizations of 4H-SiC PiN diodes with junction termination extension（JTE） are simulated by using a two-dimensional device simulator（ISE-TCAD 10）.0.4H-SiC PiN diodes with JTE are fabricated with a planar fabrication process based on simulation.Good consistency between simulation and experiments was achieved.It shows that a 4H-SiC PiN diode with optimized JTE edge termination can reach a breakdown voltage of 1 600 V,which is more than 90 percent of ideal parallel plane junction breakdown voltage.