Hg_(1-x)Cd_xTe光导探测器的电学参量分析

THE ELECTRICAL PARAMETER ANALYSIS FOR Hg 1 x Cd x Te PHOTOCONDUCTORS

测量了Ｈｇ１－ｘＣｄｘＴｅ光导探测器中电阻率与温度及磁场强度的关系．在Ｓｈｕｂｎｉｋｏｖ－ｄｅＨａａｓ（ＳｄＨ）测量中，发现了表面电子的浓度在１．２～５５Ｋ的范围内没有变化．一个包括体电子和两类表面电子的三带模型被用来分析电阻率随温度变化的关系。

The temperature and magnetic field dependent resistivity was measured for Hg 1 x Cd x Te photoconductive detectors. The density of all kinds of surface electrons was found to keep constant from 1.2K to 55K by the Shubnikov de Haas (SdH) measurements. A three band model, which consists of two kinds of surface electrons and bulk electrons, was proposed to fit the temperature dependent resistivity. The electrical parameters obtained by this model agree well with the experimental data and the results given by SdH measurements.