无吸收模式滤波结构高亮度大功率宽条形半导体激光器

High Brightness High Power Broad Area Semiconductor Lasers with No-Absorption Mode Filter

提升宽条形半导体激光器水平方向激射光输出的光束质量,改善宽条形半导体激光器的工作特性,一直是大功率、高亮度宽条形半导体激光器器件工艺研究的难点。基于激射光在无源波导内的衍射原理制备宽条形半导体激光器的模式滤波结构,利用AlxNy绝缘介质薄膜应力使基底半导体材料带隙变化的原理制备无吸收无源波导。将两者结合,设计制备了带有无吸收模式滤波器结构的宽条形半导体激光器,使器件平均最大输出功率提高49%,垂直发散角达20.6°,水平发散角达3.3,°3500 h老化实验,其千小时退化率小于0.085%。

It is the most difficult point of high brightness high power semiconductor lasers to improve horizontal directional beam quality and performance characteristic of broad area laser diodes（LDs）.According to diffraction losses characteristic of those different modes,lasing light propagates in the passive waveguide of broad area semiconductor laser.And AlxNy dielectric film stress is used to prepare no-absorption passive waveguide by changing base band gap of semiconductor materials.Combining both the principle and the technology,broad area semiconductor lasers with no-absorption mode filter（passive waveguide） have been designed whose average peak power output increases by 49% for new structural device,vertical divergence angle is up to 20.6°,and horizontal divergence angle is up to 3.3°.It is less than 0.085% of aging speed per thousand of the LDs after testing of 3500 h aging.