硅单晶中掺杂元素砷的SRXRF微区分析研究

A STUDY ON MICROANALYSIS OF THE DOPING ELEMENT ARSENIC IN SIUCON MONOCRYSTALLINE BY SRXRF

研究了同步辐射X射线微荧光分析法对硅单晶中掺杂元素As的微区分析．利用同步辐射光源的优越性和微区扫描装置获得了清晰的掺杂元素As的二维分布图，用四探针法验证了测定结果．实验结果表明，同步辐射X射线微荧光分析法可以成为对半导体材料硅单晶样品准确地进行大面积扫描微区测定的手段．本文用品体生长理论对实验结果进行了讨论．

Application of synchrotron radiation excited X-ray microfluorescence analysis(SRXRMF) in analysis of doping fort arsenic in silicon monocrystalline is studied. Theclear two-dimensional intensity distribution images of arsenic are obtained by using microprobe scanning apparatus and synchrotron radiation source. These analytical results are verified by usingthe measure method of four-point probe. The measured results show that the SRXRMF can be usedas an accurate microanalysis means for large area scanning of silicon monocrystalline semiconductormaterial. In this paper, the experimental results are discussed with the theory of crystal growth.