CIGS太阳能电池中薄膜材料电阻率的研究

Study on electric resistivity of thin film materials for GIGS solar cell

研究了减小CIGS太阳能电池中Mo,CIGS,n-ZnO三层薄膜电阻率的溅射工艺方法,以达到减小电池串联电阻的目的。改变工艺参数制备不同样品并对其进行测试分析,得到了溅射气压、衬底温度、退火工艺对电阻率和薄膜微观形貌的影响。证明了采用双层溅射法制备的Mo、低气压、衬底加热、溅射后退火得到的CIGS以及3～5 Pa下制备的n-ZnO都有较好的薄膜质量和较低的电阻率。

In order to reduce electric resistivity of three-layer thin film materials and finally reduce series resistance of CIGS solar cell,improvements of sputtering technics for Mo,CIGS and n-ZnO have been investigated.Different samples are prepared at different fabricating conditions.The influences of sputtering air pressure,substrate temperature and anneal technique on electric resistivity and microstructure are given by analyzing test results.It has been testified that Mo gained by double-layer sputtering,CIGS gained at low sputtering air pressure with substrate heated and then annealed,n-ZnO gained when sputtering pressure is around 3 ~5 Pa have relatively better quality and lower electric resistivity.