氧压对ZnO薄膜电阻温度系数的影响

Effect of the Oxygen Pressure on the Temperature Coefficient of Resistance of ZnO Thin Films

采用脉冲激光沉积(PLD)技术,在不同氧气氛下,在Si(111)衬底上生长了ZnO薄膜,使用X线衍射仪分析了ZnO薄膜的结晶质量。计算了不同氧气氛下生长的ZnO薄膜的电阻温度系数(TCR)值,发现随着氧分压降低,ZnO薄膜的TCR值增大;ZnO薄膜的TCR值最高可达-8%/K。这为研究ZnO薄膜的导电特性提供了新的途径,开辟了ZnO薄膜在室温非制冷红外微测辐射热计材料中的应用潜力。

The ZnO films were successfully deposited on Si（111） substrate by the pulsed laser deposition（PLD） under different oxygen atmospheres.The crystalline quality of ZnO films was analyzed by means of X-ray diffractometer.The temperature coefficient of resistance（TCR） of ZnO films grown at different oxygen atmospheres was calculated.It was found that the TCR increased with the decreasing of oxygen pressure.The highest TCR value of ZnO film was up to-8%/K.The enhancement of TCR has opened a new way for studying the conducting characteristics of ZnO film and provided a potential application of ZnO film to such materials as the infrared bolometric sensors.