射频磁控溅射法低温沉积MnZn铁氧体薄膜

MnZn Ferrite Films Deposited by RF Magnetron Sputtering with Low Substrate Temperature

采用磁控溅射法在Si(100)、Si(111)和玻璃基片上原位沉积MnZn铁氧体薄膜,用X线衍射(XRD)仪、场发射扫描电子显微镜(FESEM)表征薄膜的物相结构与微观形貌,用振动样品磁强计(VSM)测试薄膜的磁性能。结果表明,在Si(100)基片上原位沉积的MnZn铁氧体薄膜,在较低的基片加热温度(Ts=50℃)下即可晶化;Ts升高,MnZn铁氧体薄膜的XRD衍射峰强度逐渐增强;当Ts≤150℃时,MnZn铁氧体薄膜X线衍射主峰为(311),但当Ts≥200℃后,MnZn铁氧体薄膜沿{111}晶面生长。在Si(111)和玻璃基片上沉积的MnZn铁氧体薄膜,其XRD衍射主峰分别为(111)和(311)。

The MnZn ferrite films were deposited in-situ by RF magnetron sputtering on Si（100）,Si（111） and glass substrates.The phase structure and the microstructure of the MnZn films have been characterized by using X-ray diffraction（XRD） and the field emission scanning electron microscope（FESEM） respectively,the magnetic properties of the films have been measured by the vibrating sample magnetometer（VSM）.The results showed that MnZn ferrite films deposited in-situ on Si（100） were crystallized at low substrate temperature（Ts=50 ℃） without post-annealing process.The intensity of X-ray diffraction peaks became stronger when the substrate temperature Ts increased.When the substrate temperature Ts was equal to or less than 150 ℃,the main diffraction peak of MnZn ferrite films deposited on Si（100） was（311）.When the substrate temperature Ts was equal to or greater than 200 ℃,the MnZn ferrite films were grown along {111} crystal face.But the XRD main peaks of MnZn ferrite films deposited on Si（111） and glass were that of（111） and（311）,respectively.