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掺杂Sm_2O_3对BZT20介质瓷性能的影响 被引量:1

Influence of Sm_2O_3-doping on Dielectric Properties of BZT20 Ceramics
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摘要 以碳酸钡、二氧化锆和二氧化钛等为原料,Sm2O3为掺杂剂,制得了Ba(Zr0.2Ti0.8)O3系介质瓷,并研究了其性能,用扫描电镜对试样微观形貌进行了观察。结果表明,当x(Sm2O3)<0.2%时,Sm3+进入晶格A位后,随掺杂量的增加,Sm3+倾向于进入晶格B位。Sm2O3的掺杂量对试样介电常数和损耗有显著影响,x(Sm2O3)=0.2%时,试样介电常数最高(约为5 600);随Sm2O3掺杂量继续增加,试样介电损耗得到明显改善,最低降至0.002 1。 The Ba(Zr0.2Ti0.8)O3 ceramics were prepared using BaCO3,ZrO2 and TiO2 et al as crude materials,Sm2O3 as dopant,and the dielectric properties are investigated.The morphology of the samples was observed by SEM.It was found that the Sm3+ ions tended to enter into the B-site in the perovskit lattice with the amount of the dopants increase when the amount of x(Sm2O3) was less than 0.2% and after the Sm3+ ions entered into the A-site.The amount of Sm2O3-dopant has significantly influence on the dielectric constant and the loss of the sample.When the amount of x(Sm2O3) was 0.2%,the ceramic sample had the maximum dielectric constant of about 5 600.With the amount of Sm2O3-dopant increase,the dielectric loss of the sample has been improved significantly and the minimum loss has decreased to 0.002 1.
出处 《压电与声光》 CSCD 北大核心 2011年第2期302-304,共3页 Piezoelectrics & Acoustooptics
基金 国家自然科学基金资助项目(50974052) 河北省教育厅科学计划研究基金资助项目(2008119)
关键词 掺杂 介电性能 微观形貌 doping dielectric properties microstructure
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  • 1ZHI Yu, CHEN Ang, GUO Ruyan. Dielectric proper- ties and high tunability ofBaTio. 7 Zro. 3 03 ceramicsunder de electric field[J]. App1 Phys Lett, 2002, 81 (7) : 1285-1287.
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