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快速光热退火法制备多晶硅机理研究 被引量:1

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摘要 本论述研究了非晶硅薄膜的快速光热退火技术,先利用PECVD法设备沉积非晶硅薄膜,然后放入快速光热退火炉中进行退火。退火前后的薄膜利用X射线衍射仪(XRD)测试其晶体结构;对不同退火温度下的系列样品测定了RXD谱图。研究表明退火温度、退火时间对非晶硅薄膜的晶化都有很大的影响,光波的频率和光照强度是起着主导作用。
作者 魏晋军
出处 《甘肃科技纵横》 2011年第2期36-36,78,共2页 Scientific & Technical Information of Gansu
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