低温APCVD法制备氮化硅薄膜

SILICON NITRIDE THIN FILMS PREPARED BY LOW TEMPERATURE ATMOSPTHERIC PERSSUER CHEMICAL VAPOR DEPOSITION

本实验用常压化学气相沉积法（ ＡＰＣＶＤ） 在平玻璃基板上沉积了氮化硅薄膜，研究了基板温度、反应气体比例、热处理等对氮化硅薄膜制备的影响，发现在７００ ℃以下，ＮＨ３／ＳｉＨ４ 流量比例为１５／１ 时制得较纯的氮化硅薄膜，比常规ＡＰＣＶＤ 法制备温度低大约１５０ ℃。

Silicon nitride thin films were prepared on plate glass substrate by atmospheric pressure chemical vapor deposition,whose deposition temperature decreased about 150℃ than usual APCVD method.We studied technique factors which affect preparation of Si 3N 4 films,such as temperature of substrate,ratio of gas,thermal treatment,and found out that high purified Si 3N 4 were deposited when the ratio of NH 3/SiH 4 was 15/1 and the temperature was lower than 700℃.