摘要
本实验用常压化学气相沉积法( APCVD) 在平玻璃基板上沉积了氮化硅薄膜,研究了基板温度、反应气体比例、热处理等对氮化硅薄膜制备的影响,发现在700 ℃以下,NH3/SiH4 流量比例为15/1 时制得较纯的氮化硅薄膜,比常规APCVD 法制备温度低大约150 ℃。
Silicon nitride thin films were prepared on plate glass substrate by atmospheric pressure chemical vapor deposition,whose deposition temperature decreased about 150℃ than usual APCVD method.We studied technique factors which affect preparation of Si 3N 4 films,such as temperature of substrate,ratio of gas,thermal treatment,and found out that high purified Si 3N 4 were deposited when the ratio of NH 3/SiH 4 was 15/1 and the temperature was lower than 700℃.
出处
《陶瓷学报》
CAS
1999年第3期119-122,共4页
Journal of Ceramics
基金
国家自然科学基金
浙江省"151"人才工程资助