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A 150-nA 13.4-ppm/℃switched-capacitor CMOS sub-bandgap voltage reference 被引量：5

A 150-nA 13.4-ppm/℃switched-capacitor CMOS sub-bandgap voltage reference
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摘要 A nanopower switched-capacitor CMOS sub-bandgap voltage reference has been implemented using a Chartered 035-μm 3.3-V/5-V dual gate mixed-signal CMOS process.The proposed circuit generates a precise sub-bandgap voltage of 1 V.The temperature coefficient of the output voltage is 13.4 ppm/℃with the temperature varying from -20 to 80℃.The proposed circuit operates properly with the supply voltage down to 1.3 V,and consumes 150 nA at room temperature.The line regulation is 0.27%/V.The power supply rejection ratio at 100 Hz and 1 MHz is -39 dB and -51 dB,respectively.The chip area is 0.2 mm2. A nanopower switched-capacitor CMOS sub-bandgap voltage reference has been implemented using a Chartered 035-μm 3.3-V/5-V dual gate mixed-signal CMOS process.The proposed circuit generates a precise sub-bandgap voltage of 1 V.The temperature coefficient of the output voltage is 13.4 ppm/℃with the temperature varying from -20 to 80℃.The proposed circuit operates properly with the supply voltage down to 1.3 V,and consumes 150 nA at room temperature.The line regulation is 0.27%/V.The power supply rejection ratio at 100 Hz and 1 MHz is -39 dB and -51 dB,respectively.The chip area is 0.2 mm2.
作者 严伟 李文宏 刘冉
机构地区 State Key Laboratory of ASIC & Systems
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第4期155-160,共6页 半导体学报（英文版）
基金 Project supported by the National High Technology Research and Development Program of China(No2009AA011607)
关键词 nanopower sub-bandgap SWITCHED-CAPACITOR voltage reference nanopower； sub-bandgap； switched-capacitor； voltage reference；
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献13

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Journal of Semiconductors
2011年 第4期

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