期刊文献+

金属互连焊球的电迁移试验设计研究与灵敏度分析 被引量:3

DESIGN OF EXPERIMENTS AND SENSITIVITY ANALYSIS FOR ELECTROMIGRATION ON SOLDER JOINTS
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摘要 综合考虑多种电迁移驱动机制,基于ANSYS软件和FORTRAN程序提出电迁移失效算法,导出了电迁移灵敏度分析方程,并建立相应的数值算法.在此基础上考虑设计变量为激活能、初始自扩散系数和材料力学性能参数等对金属互连焊球进行电迁移灵敏度分析,同时基于三维有限元分析的全因子试验设计法对CSP封装结构的电迁移寿命进行仿真预测. This paper presents a algorithm for electromigration(EM) failure analysis based on ANSYS multi-physics commercial software and FORTRAN codes with considering multiple driving migration mechanisms.The electromigration sensitivity analysis equation and the corresponding numerical algorithm are also proposed.The sensitivity analysis for solder joints is implemented when the involved EM sensitivity design variables are the activation energy,the initial self-diffusion coefficient and mechanical properties of the material parameters.Furthermore,the EM simulation for CSP structurs performed to get failure lifetime based on the full factorial design of experiments(DOE) by using 3D finite element analysis.
出处 《固体力学学报》 CAS CSCD 北大核心 2011年第2期158-166,共9页 Chinese Journal of Solid Mechanics
基金 浙江省自然科学基金项目(Y6110641)资助
关键词 电迁移 灵敏度 试验设计 互连焊球 有限元分析 electromigration sensitivity design of experiments solder joints finite element analysis
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参考文献12

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二级参考文献28

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共引文献30

同被引文献35

  • 1Tu K N. Recent advances on electromigration in very-large-scale-integration of interconnects [J]. Journal of Applied Physics, 2003, 94 (9): 5451-5473.
  • 2Liang S W, Chen Chih, Han J K, Xu L H, Tu K N. Blocking hillock and whisker growth by intermetallic compound formation in Sn-0.7Cu flip chip solder joints under electromigration [J]. Journal of Applied Physics, 2010. 107(9): 093715.
  • 3Dalleau D, Weide-Zaage K. Three-dimensional voids simulation in chip metallization structures: a contribution to reliability evaluation [J]. Microelectronics Reliability, 2001, 41(9/10): 1625- 1630.
  • 4Liu Y, Liang L H, Irving S, Luk T. 3D Modeling of electromigration combined with thermal-mechanical effect for IC device and package [J]. Microelectronics Reliability, 2008, 48 (6): 811-824.
  • 5Tan C M, Hou Y J, Li W. Revisit to the finite element modeling of electromigration for narrow interconnects [J]. Journal of Applied Physics, 2007, 102(3): 127.
  • 6Liang L H, Zhang Y X, Liu Y. Prediction of electromigration failure of solder joints and its sensitivity analysis [J]. Journal of Electronic Packaging, 2011, 133(3): 031002.
  • 7Shi X Q, Wang Z P, Pang H L, Zhang X R. Effect of temperature and strain rate on mechanical properties of 63Sn/37Pb solder alloy [J]. Journal of Electronic Package, 1999, 121(3): 179- 185.
  • 8Gee S, Kelkar N, Huang J, Tu K N. Lead-free and PbSn bump electromigration testing [C]. Proceedings of InterPACK, 2005:1-6.
  • 9Chen C I, Lee C C, Ni C Y. Experimental and numerical investigations on solder reliability for flip-chip BGA packaging [C]. IEEE/SOLI2008, 2008: 2756-2762.
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二级引证文献13

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