摘要
硫钝化是一种比较有效的钝化ＧａＡｓ 表面的方法．本文使用Ｎａ２Ｓ、Ｓ２Ｃｌ２ 和ＣＨ３ＣＳＮＨ２三种化学试剂对表面本征层重掺杂层（ｓｉｎ＋ ）结构的ＧａＡｓ 样品进行了钝化，利用光调制反射谱观察到许多个ＦｒａｎｚＫｅｌｄｙｓｈ 振荡，测量出本征层的电场强度，研究了ＧａＡｓ表面硫钝化前后费米能级的变化，并且比较了各种钝化方法的钝化效果．
The sulfur Passivation is an effective method of passivating GaAs surface. In this paper, three kinds of sulfur passivation involving Na\-2S,S\-2Cl\-2 and CH\-3CSNH\-2 have been used to passivate surface\|intrinsic\|n\++(SIN\++) GaAs. Many FKOs are observed in the photoreflectance of modulation spectroscopy, and the intensity of the electric field in the intrinsic layer is determined by the FKOs rather exactly. We have studied the shifts of the surface Fermi level after sulfur passivation, and compared the effectiveness of three sulfur passivation methods.
基金
国家自然科学基金
