摘要
引入半导体器件数值模拟的方法，即求解漂移扩散模型为基础的半导体基本方程，对硅锥阴极中载流子的输运过程进行了数值模拟．这一方法可以比较全面地描述载流子输运对硅锥阴极状态的影响．模拟的结果表明，考虑发射电流后，发射电子的供给函数较零电流近似时小．另外，在一定条件下，由于电子输运、ＳＲＨ 产生复合率和碰撞电离产生率的限制，发射电流存在一个上限；强渗透电场下，硅锥阴极顶端内部发生明显的碰撞电离．
The state of a Si emitter concerned with the carrier transportation is simulated with the method used in semiconductor devices simulation.Because the basic semiconductor equations of drift\|diffusion model are solved,the state in the emitter influenced by carrier transportation could be well realized.The results show that the electron supply function is less then that of ZECA.The results also show that there is an upper limit of emitted current under some condition because of the confinement of carrier transportation,SRH generation\|recombination rates and ionization rates.Clear impact ionization is found within the apex when there is strong penetrating electric field.
基金
国家自然科学基金
博士点基金
