摘要
简单介绍了IV-VI族稀磁半导体的特性。IV-VI族稀磁半导体的自发磁化、矫顽力和居里温度等性质可由载流子浓度调节。对制造技术导致的缺陷反应迟钝用常规制备方法就可以制备IV-VI族稀磁半导体。作为一种磁离子和载流子能被分别导入和控制的稀磁半导体,IV-VI族稀磁半导体有利于研究稀磁半导体中的铁磁特性。给出了IV-VI族稀磁半导体由独立磁离子杂质、相邻杂质相互作用、晶格反磁性和载流子自旋密度四部分作用组成的总磁化强度的各部分的数学表达式。
The characteristics of diluted magnetic semiconductors（DMS） in IV-VI are introduced.Its properties of the spontaneous magnetization,the coercive force and the Curie temperature can be modulated by the carriers density.The diluted magnetic semiconductors in IV-VI can be produced by using the conventional preparation method.The IV-VI compounds offer a good opportunity to study ferromagnetic properties in diluted magnetic semiconductors since the magneticions and carriers can be introduced and controlled independently.The magnetization of diluted magnetic semiconductors in IV-VI is expressed as a sum of contributions due to isolated impurities,pair impurities interactions,lattice diamagnetism and spin density of carriers
出处
《辽宁科技大学学报》
CAS
2011年第1期1-3,20,共4页
Journal of University of Science and Technology Liaoning
关键词
稀磁半导体
载流子
磁化强度
diluted magnetic semiconductors
carriers
magnetization
