ITO薄膜的制备以及性能的研究

Production and properties of ITO transparent conductive film glass

在室温条件下通过直流磁控溅射法在普通玻璃基体上制备了光电性能优良的ITO薄膜。靶材为ITO陶瓷靶,其中In2O3与SnO2的质量比为9∶1。运用UV-2550紫外可见光光度计测量样品的透光率,采用SZT-2四探针测试仪测量样品表面的电阻率,用扫描电镜(SEM)对样品进行表征。研究了溅射压强、溅射功率等参数对薄膜光电性能的影响。研究表明,ITO薄膜的电阻率随着溅射功率的增大而减小,在溅射功率为110W时ITO薄膜的透光率有相对好的数值。溅射压强为1.0Pa时既能保持ITO薄膜低的电阻率又能保证高的透光率。

The indium tin oxide （ITO） thin films were prepared on glass substrates by DC magnetron sputtering process at room temperature, using an ITO target with a combination of 90% In2O3 and 10% SnO2in mass fraction. The crystal structure and surface shape of the film are analyzed by SEM, the light transmittance and resistance are measured by UV-2550 and SZT-2. The influences of sputtering pressure and sputtering power on the electrical and optical properties of as-deposited ITO thin films were investigated. The result manifest that the resistance of the ITO thin get decreases with increasing of sputtering power, ITO thin have a good light transmittance in sputtering power of ll0W. When the sputtering pressure at 1.0Pa, it is good for increasing light transmittance and decreasing resistivity.