关于掺杂半导体光吸收的研究

The Study of Optical Absorption in a Doping Semiconductor

掺杂半导体光吸收是半导体材料应用于电子和光电器件的基础。当光场作用在n型掺杂半导体材料砷化镓时,结果表明不同掺杂浓度下光生电子浓度随着弛豫时间的变化而变化,光生电子浓度随着光吸收系数的增加而增加。

The study of the optical absorption in a semiconductor such as N-type doping GaAs excited optically is of fundamental importance both for its applications in electronic and optoelectronic devices.It is shown from the study that the electron relaxation time exhibits a relatively strong temperature dependence and the optical carrier density decreases with increasing optical absorption in a polar semiconductor like GaAs excited optically.