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深亚微米半导体器件模拟方法的分析与设计 被引量:2

Analysis and Design for Deep Submicron Semiconductor Device Simulation
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摘要 对半导体器件模拟软件系统的构造进行了全面系统的分析,对所涉及到的关键问题进行了深入讨论。研究了适合于深亚微米半导体器件的流体动力学模型的物理实质、相互关系和选取原则,总结了非线性偏微分方程组系统的离散技术,提出了可行的迭代求解算法与方法,完成了面向对象的模拟软件结构分析与系统设计,初步探讨了基于CORBA The configurations of modern semiconductor device simulation system with the major key factors that concerned are fully analyzed and discussed in this paper. The physical essence, relationships and applications of the different Hydrodynamic Transportation Models are presented, and the discretization schemes for nonlinear partial differential equations as well as the possible iteration methods for the larger sparse matrix equation are proposed. Finally, the systematic analysis and design of the object oriented simulation software are achieved, and the implementation procedure and the validity of parallel calculation under the CORBA platform are further considered.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 1999年第4期382-392,共11页 Research & Progress of SSE
基金 江苏省自然科学基金!(BK97007) 国家自然科学基金!(69806002)
关键词 半导体器件 面向对象 CORBA 深亚微米 Device Simulation Object oriented Technology CORBA Technology
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参考文献4

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同被引文献27

  • 1蒲月皎,刘丕均,张亚非,王印月.纳米级MOSFET器件模拟的载流子输运模型[J].固体电子学研究与进展,2005,25(2):160-166. 被引量:4
  • 2王明网,魏同立.亚微米半导体器件模拟方法的探索[J].微电子学,1995,25(2):55-61. 被引量:1
  • 3刘梦新,高勇,张新,王彩琳,杨媛.薄膜全耗尽SOI CMOS电路高温特性模拟和结构优化[J].Journal of Semiconductors,2006,27(6):1120-1124. 被引量:2
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