摘要
采用ＭＯＣＶＤ 方法成功地研制了具有线性ＧＲＩＮ 结构ＧａＡｓ／ＡｌＧａＡｓ单量子阱激光器。该激光器的峰值波长为８１５～８２５ ｎｍ ，阈值电流为１３０ ｍ Ａ。工作电流在４８０ ｍ Ａ 时，单面连续输出光功率高达２００ ｍ Ｗ，且基本保持在单模工作状态。工作在９７０ ｍ Ａ 时，单面连续输出光功率为０．５ Ｗ。
High output power GaAs/AlGaAs single quantum well lasers with two pairs of GRIN have been fabricated by MOCVD method. Its wavelength ranges from 815 to 825 nm, threshold current is 130 mA at room temperature under CW operation. 200 mW/facet and 0.5 W/facet for CW output optical power have been obtained under 480 mA and 970 mA operation respectively.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1999年第4期405-409,共5页
Research & Progress of SSE
基金
河北省自然科学基金
