非掺杂半绝缘LECGaAs中电参数与碳浓度及EL2浓度的关系

Dependence of the Electrical Properties on EL2 Concentration and Carbon Acceptor Concentration in Undoped Semi insulating LEC GaAs

利用范德堡方法和光吸收方法研究了非掺杂半绝缘（ＳＩ）ＬＥＣＧａＡｓ 中电参数与碳（Ｃ）浓度及ＥＬ２ 浓度的关系。通过比较实验结果和理论计算结果发现。

The correlations among the electrical properties, the EL2 concentration and the carbon acceptor concentration in undoped semi insulating LECGaAs are investigated quantitatively by use of optical absorption method and Van der Pauw method. Comparisons are made between the experiment results and those calculated from equation of neutrality charge and carrier statistics theory. It is found that other acceptors, except carbon, exist and play an important role in electrical compensation in this semi insulating material.