摘要
用人体静电放电模拟器对以GaAs MESFET为主要有源器件的MMIC的静电敏感度进行研究,叙述了在MMIC设计、工艺制作等环节防静电和提高MMIC抗静电能力的措施,采用这些措施后,低噪声MMIC静电损伤阈值达到500~800 V。
By using ESD (electrostatic discharge) HBM (human body model) waveform generator the electrostatic sensitivity of GaAs MMIC which is the major active device composed of GaAs MESFET has been studied. In this paper, by using the techniques of properly design of MMIC ESD protection circuit and process, the increase of MMIC ESD threshold level can be obtained. The ESD threshold level of low noise MMIC was greater than 500~800 V.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1999年第4期433-437,共5页
Research & Progress of SSE
关键词
砷化镓
MMIC
抗静电
微波集成电路
Electrostatic Discharge GaAs MMIC Electrostatic Sensitivity