注FCC4007电路的电子和X射线辐照效应

Electron and X ray Radiation Effects in Fluorinated CC4007 Circuits

分析研究了用注Ｆ工艺制作的ＣＣ４００７ 电路电子和Ｘ射线辐照响应结果。实验表明，把适量的Ｆ注入栅场介质，能明显抑制辐射所引起的ＰＭＯＳＦＥＴ 阈电压的负向漂移和ＮＭＯＳＦＥＴ阈电压的正向回漂及静态漏电流的增加。Ｉ－Ｖ特性表明，栅介质中的Ｆ能减小辐射感生氧化物电荷和界面态的增长积累。注Ｆ栅介质电子和Ｘ射线辐照敏感性的降低，是Ｓｉ－Ｆ结键释放了Ｓｉ／ＳｉＯ２ 界面应力，并部分替换在辐照场中易成为电荷陷阱的Ｓｉ－Ｈ弱键的缘故。

Electron and X ray radiation effects in fluorinated CC4007 circuits have been investigated. The experimental results have shown that by incorporating a minute amount of fluorine into internal SiO 2, the generation of interface states and oxide trapped charges can be suppressed to improve the shifts of threshold voltage and the degradation of the quiescent supply current. The decreasing radiation sensitivity in fluorinated oxides should be attributed to the replacement of Si H weak bonds by Si F bonds and the relaxation of Si/SiO 2 interface stress.