摘要
分析研究了用注F工艺制作的CC4007 电路电子和X射线辐照响应结果。实验表明,把适量的F注入栅场介质,能明显抑制辐射所引起的PMOSFET 阈电压的负向漂移和NMOSFET阈电压的正向回漂及静态漏电流的增加。I-V特性表明,栅介质中的F能减小辐射感生氧化物电荷和界面态的增长积累。注F栅介质电子和X射线辐照敏感性的降低,是Si-F结键释放了Si/SiO2 界面应力,并部分替换在辐照场中易成为电荷陷阱的Si-H弱键的缘故。
Electron and X ray radiation effects in fluorinated CC4007 circuits have been investigated. The experimental results have shown that by incorporating a minute amount of fluorine into internal SiO 2, the generation of interface states and oxide trapped charges can be suppressed to improve the shifts of threshold voltage and the degradation of the quiescent supply current. The decreasing radiation sensitivity in fluorinated oxides should be attributed to the replacement of Si H weak bonds by Si F bonds and the relaxation of Si/SiO 2 interface stress.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1999年第4期453-457,共5页
Research & Progress of SSE