基于电子束探测技术的VLSI路径延时故障测试方法

VLSI Path Delay Fault Test Method Based on Electron Beam Probe Technology

介绍了将电子束探测(EB-P)技术应用于路径延时故障的测试。首先用EB-P的工作原理和实验结果说明了用EB-P测量路径延时的可行性;随后讨论了一种将EB-P用作测试点的测试点插入技术。EB-P作为一种仅具可观性的测试点,较之于既可测又可观的测试点同样具有减少需实测路径延时故障数目,消除不可测路径延时故障的作用。此外,用EB-P作为测试点,还具有不会增加路径和延时、不用改动电路的物理结构、不会增加芯片面积。

A path delay fault test method based on electron beam probe(EB P) technology is presented The operational principle of EB P and the results of some experiments demonstrate the feasibility of EB P in measuring path delay The use of EB P as test point is discussed As a kind of test point that only adds observability, EB P has the advantage of reducing the number of path delay faults that need to be tested directly and the merit of rendering untestable path testable Furthermore, this method doesn’t expand circuit area, nor increasing the delays of all the paths that go through the test point Also, no multiple clock periods are needed Finally, examples are given for illustration