TFSOIRESURF器件电势和电场分布的解析研究

An Investigation Into Potential and Electric Field Distributions of TFSOI RESURF Devices

在物理模型的基础上,对TFSOIRESURF器件的电势和电场分布进行了解析分析,系统研究了漂移区掺杂浓度、漂移区长度、埋层SiO2 厚度和SOI层厚度等结构参数同电势和电场分布的关系,并首次定量分析了在工艺加工过程中必然引入的场SiO2 界面电荷密度的影响。

Based on physical models,distribution of the potential and electric field of the TFSOI RESURF structure is studied Relations between potential and electric field distributions and device parameters are analyzed using this model Furthermore,effects of the interface charge density of the field SiO 2 induced in the process are taken into consideration The analytical results agree with the simulations of MEDICI