三重扩散IGBT的参数优化

Optimization of IGBTs Fabricated with Triple Diffusion Process

采用三重扩散工艺制作IGBT是一种比较经济的方法。利用解析方法和二维模拟方法,优化了耐压为600 V三重扩散IGBT的部分参数,为实际利用三重扩散工艺制作耐压600

Fabricating insulated gate bipolar transistors(IGBTs)with triple diffusion process is an economical method Some of the parameters of an IGBT with a breakdown voltage of 600 V,which is fabricated using triple diffusion process,are optimized by means of the theoretical analysis and two dimensional simulation It provides a parameter base for actual fabrication of the insulated gate bipolar transistor with 600 V breakdown voltage