摘要
含氮ＣＺ硅的电学性能完全有别于含氮的ＦＺ硅和无氮的ＣＺ硅，研究表明，含氮ＣＺ硅能形成一种与氮有关的新施主，它随氮氧复合物的形成而形成，随氮氧复合物的消失而消失．文章进一步研究了氮—新施主的结构模型，并对氮—新施主的形成和消除与热处理条件的关系进行了探讨．
The electronic characteristic of nitrogen\|doped CZ silicon is completely different from that of nitrogen\|doped FZ silicon and nitrogen\|undoped CZ silicon. Our research shows that nitrogen\|doped CZ silicon can generate a kind of nitrogen related new donor which forms and disappears with the formation and disappearance of nitrogen\|oxygen complexes, respectively. This paper studies further the structure model of nitrogen related new donor. The relationship between the formation and disappearance of nitrogen—new donor with the heat treatment condition is discussed. PACC:6170R, 6170A, 7280C
