O76mm智能剥离SOI材料的制备及其表面缺陷的分析

Fabrication and Surface Defect Analysis of φ 76mm SOI Wafers Using Smart\|Cut Technology

结合硅片低温键合和中等剂量的氢离子注入，用智能剥离技术（Ｓｍ ａｒｔ－ｃｕｔ○Ｒ）成功地制备了７６ｍ ｍ 的ＳＯＩ材料．用原子力显微镜（ＡＦＭ）测得表面粗糙度约为７ｎｍ ，比普通的抛光硅片约大一个数量级．ＳＯＩ上层硅膜存在表面缺陷，包括未转移区和气泡等，这是由剥离前硅片键合界面存在的空洞引起．通过改进低温键合工艺，提高键合质量，可得到基本无宏观表面缺陷的ＳＯＩ材料．

mm (three inches) SOI wafers have been fabricated successfully using Smart\|Cut technology,which is based on low temperature silicon wafer bonding technique and middle dose hydrogen implantation technique. The relation between the surface defects (untransferred zones and microvoids) of the top silicon layer and the bonding processes is analyzed using magic mirror. The SOI wafers without macroscopic defects can be fabricated by improving bonding processes. PACC:7340A, 6170T, 8140E