摘要
根据少子衰退的加速度分布，提出了一种测量半导体中少子漂移迁移率的新方法．实测了窄禁带半导体碲镉汞的少子迁移率和扩散长度．
A new method of determining the excess carrier bipolar mobility is described.The distribution of the acceleration of excess carrier decay with time is main characteristics.According the peak position and semi\|peak width of the characteristic curve,the excess carrier mobility and diffusion length can be obtained.The excess carrier mobility and diffusion length of HgCdTe is determined by this method. PACC:0560, 7240
