背面刻蚀对单晶硅太阳电池性能影响的研究

Study of the Influence of Back Side Etching on the Performance of Monocrystalline Silicon Solar Cells

为了减少太阳电池载流子的背面复合,采用离子束对沉积完S iNx减反射膜后的单面扩散和双面扩散的单晶硅片背面进行刻蚀,研究了刻蚀时间对太阳电池性能的影响。采用标准的太阳电池单片测试仪测试电池性能。发现背面经离子束刻蚀后,单面扩散和双面扩散电池片的并联电阻、开路电压、填充因子和转换效率都有所提高,而串联电阻和短路电流的变化则不是很明显。本实验采用的是Ⅱ类单晶硅片,单面扩散电池片通过背面刻蚀后最高转换效率达到15.99%,比不刻蚀样品增加了0.69%;双面扩散电池片通过背面刻蚀后最高转换效率则达到16.4%,比不刻蚀样品增加了0.68%。

To reduce the carrier recombination on the rear side of solar cells,this article carried out the ion beam etching on the rear side of single-side diffused and double-side diffused silicon wafers after depositing SiNx anti-reflection coating.The influence of etching time on the performance of solar cells was investigated.The performance of solar cells was measured by a standard solar cell tester.The results showed that the shunt resistance,open circuit voltage,fill factor and efficiency of the solar cells were improved after the ion beam etching on the rear side,while the changes of series resistance and short-circuit current were not obvious.The silicon wafers used in this experiment were class Ⅱ.After the silicon wafers were etched,the maximum efficiency of solar cells by single-side diffusion reached 15.99%,with an increase of 0.69% than that from solar cells without etching,while the maximum efficiency of solar cells by double-side diffusion reached 16.4% with an increase of 0.68% than that from solar cells without etching.