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提高共源共栅CMOS功率放大器效率的方法 被引量：2

Method of a Efficiency-Boosting by Cascode CMOS Power Amplifiers
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摘要 利用共源共栅电感可以提高共源共栅结构功率放大器的效率。这里描述了一种采用共源共栅电感提高效率的5.25 GHz WLAN的功率放大器的设计方法,使用CMOS工艺设计了两级全差分放大电路,在此基础上设计输入输出匹配网络,然后使用ADS软件进行整体仿真,结果表明在1.8 V电源电压下,电路改进后与改进前相比较,用来表示功率放大器效率的功率附加效率(PAE)提高了两个百分比。最后给出了功放版图。 The efficiency of the cascode power amplifier can be boosted by use of cascode-inductance.The design of power amplifier using cascode-inductance for 5.25 GHz WLAN is described.The method is applied to a full differential two-stage amplifier,and then the input-output matching network is designed.Then the global simulation is completed by the ADS software.The results show that,with 1.8 V supply voltage,the power-added efficiency of the improved PA has an increase about two-percent.Finally,the layout of the improved PA is presented.
作者 韦小刚 吴明赞 李竹
机构地区 南京理工大学自动化学院
出处 《电子器件》 CAS 2011年第2期184-186,共3页 Chinese Journal of Electron Devices
关键词 功率放大器 共源共栅电感 效率 CMOS工艺 power amplifier cascode-inductance efficiency CMOS process
分类号 TN722.7 [电子电信—电路与系统]
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  • 1肖明,吴玉广,何凤琴.一种低压I_(PTAT)~2曲率校正CMOS带隙基准源的设计[J].微电子学与计算机,2007,24(3):85-87. 被引量：3
  • 2艾渤,杨知行,潘长勇,张涛涛,阳辉,王勇,陆震.高功率放大器线性化技术研究[J].微波学报,2007,23(1):62-70. 被引量：24
  • 3Chireix H. High Power Outphasing Modulation[J]. Proc. IRE,1935,23:1370-1392.
  • 4Cox D C. Linear Amplification with Nonlinear Components[J]. IEEE Trans. Commun. ,1974,COM - 22,12:1942 - 1945.
  • 5Conradi, Carl Peter. LINC Transmitter Linearization Techniques[J]. University of Calgary Theses, 2000.
  • 6Sudstrom L. Automatic Adjustment of Gain and Phase Imhalances in LINC Transmitters [J]. Electron. Lett. , 1995,31 (3) :155 - 156.
  • 7Ampem - Darko S, AI - Raweshidy H S. Gain/phase Imba - lance Cancellation Technique in LINC Transmitters[J]. Electron. Lett. ,1998,34(22) :2093 - 2094.
  • 8Ampem-Darkko S O,AI - Raweshidy H S. A Novel Technique for Gain/Phase Error Cancellation in LINC Transmitters'[C]. Vehicular Technology Conference, 1999,4,19 - 22 : 2034-2038.
  • 9Bohge M, Gross J, Wolisz A, et al. Dynamic Resource Allocation in OFDM Systems.. an Overview of Cross-layer Optimization Principles and Techniques[J]. IEEE Network, 2007, 21(1): 53-59.
  • 10Hoh T, Ge Jianhua, Geng Shujian, et al. A Nonlinearity Predistortion Technique for HPA with Memory Effects in OFDM Systems [J]. Nonlinear Anal Real World Appl, 2007, 8(1) : 249-256.

共引文献28

同被引文献25

  • 1彭艳军,宋家友,王志功.HBT MMIC功率放大器的自适应线性化偏置技术[J].中国集成电路,2006,15(11):32-37. 被引量：12
  • 2RueyLue Wang, Yan Kuin Su, ChienHsuan Liu. 3 GHz - 5 GHz Cascoded UWB Power Amplifier [ C ]//Proc IEEE Circuits and Systems. Singapore ,2006:367-369.
  • 3Siti Maisurah,Wong Sew Kin,Fabian Kung,et al. 0.18 m CMOS Power Amplifier for UWB System[ C]//Proc Wireless and Optical Communications Networks. Singapore, 2007 : 1-4.
  • 4Sajay Jose, Hyung-Jin Lee, Dong Ha, et al. A Low-power CMOS Power Amplifier for UWB Applications [ C ]//Proc IEEE Circuits and Systems. Blacksburg, Virginia, 2005 : 5111-5114.
  • 5Diebold S, Massler H,Tessmann A, et al. 140 GHz Solid-State Am-plifier with On-Chip Tunable Output Matching[ C ]//Proc of Inte- grated Nonlinear Microwave and Millimetre-Wave Circuits. Vienna,2011 : 18- 19.
  • 6Hector Solar, Roc Berenguer, Unai Alvarado, et al. Fully Integrated 26.5 dBm CMOS Power Amplifier for IEEE 802. lla WLAN Standard with on-Chip" Power Inductors" [ C ]//Proc of IEEE Mqqx3 International Microwave. San Francisco, California, USA, 2006: 1875-1878.
  • 7CHANG J N, LIN Y S. A high-performanee CMOSpower amplifier for 60 GHz short-range communication systems[J]. Microwave ~ Optical Technology Let- ters, 2013, 55(5) :1155-1160.
  • 8JEN Y N, TSAIJ H, HUANGT W, et al. Design and analysis of a 55 to 71-GHz compact and broadband distributed active transformer power amplifier in 90-nm CMOS process[J]. IEEE Transactions on Microwave Theorv ~ TechniQues. 2009. 57(7) ~ 1637-16zt6.
  • 9HE G, ZHANG B, SHEN X. A k-band gain enhanced power amplifier in 0. 18/zm CMOS process by slow wave structure[C~//2014 IEEE International Symposi- um on Radio-Frequency Integration Technology (RFIT) Hefei:IEEE,2014 : 1-3. DOI: 10. ll09/RFIT. 2014.6933257.
  • 10XU L, WEI J. Characterization and analysis of pat- terned shields for millimeter-wave broadside-coupled balun in CMOS technology EC~// 2012 International Conference on Microwave and Millimeter Wave Tech- nology (ICMMT), Shenzhen: IEEE, 2012: 1-4. DOh 10. 1109/ICMMT. 2012. 6230018.

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电子器件
2011年 第2期

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