期刊文献+

垂直腔表面发射激光器的小信号等效电路模型的研究 被引量:2

An Semi-Analytical Method to Determine Small Signal Circuit Model Parameters for VCSEL
下载PDF
导出
摘要 结合分析法和优化法,在ADS软件中对垂直腔体表面发射激光器(VCSEL)的小信号模型进行模型参数的提取,给出了具体的计算公式、参数提取数值及不同偏置电流下模拟结果和测量结果之间的误差,可以清楚的看出,这种提取参数的方法是十分高效的,可以使模拟结果和测量结果之间的误差相对于用单一的分析法提取出来的误差更小。 A parameter extraction method to determine the parameters of small signal equivalent circuit model of vertical cavity surface emitting lasers(VCSEL),which combines the analytical method and the optimization procedure,is introduced.The equations used for extraction and the extracted parameters of circuit elements under different bias points are presented.Good agreement is obtained between the simulated and measured results in the frequency range of 50MHz~20GHz over a wide range of bias points.
出处 《电子器件》 CAS 2011年第2期190-193,共4页 Chinese Journal of Electron Devices
关键词 垂直腔体表面发射激光器 等效电路模型 参数提取 偏置电流 VCSEL equivalent circuit model parameter extraction bias current
  • 相关文献

参考文献13

  • 1Katz J, Margalit S, Harder C, et al. The Intrinsic Electrical Equiva-lent Circuit of a Laser Diode [ J ]. IEEE Journal of Quantum Electronics,1981,17( 1 ) :4-7.
  • 2Tucker R S. Large-Signal Circuit Model for Simulation of Injection Laser Modulation Dynamics[J]. IEE Pro. ,1981,128(5 ) :180-184.
  • 3Tucker R S, Kaminow I P. High-Frequency Characteristics of Directly Modulated InGaAsP Ridge Wavegnide and Buried Hetero- structure Laser [ J ]. Journal of Lightwave Technology, 1984,2 (4) : 385 -393.
  • 4Tucker R S. Circuit Model for Double-Heterostructure Laser Below Threshold [ J ]. IEE Pro. , 1981,128 (3) : 101 -106.
  • 5Bruensteiner M, George C Papen. Extraction of VCSEL Rate- Equation Parametes for Low-Bias System Simulation. IEEE J. Selected Quantum Electronics, 1999,15 ( 3 ) : 487-494.
  • 6Lee J, Nam S, Lee S H, et aL A Complete Small-Signal Equivalent Circuit Model of Cooled Butterfly-Type 2.5 Gbps DFB Laser Modules and its Application to Improve High Frequency Characteristics [ J ]. IEEE Trans. Advanced Packaging,2002,25 (4) :543-5d8.
  • 7Gao J,Gao B, Liang C. An Approach to Determining Parasitic Elements for Laser Diodes[ J]. Microwave and Optical Technology Letters, 2002,34 ( 3 ) : 191 - 193.
  • 8Minoglou K, Kyriakis-Bitzaros E D, Syvridis D, et al. A Compact Nonlinear Equivalent Circuit Model and Parameter Extraction Method for Packaged High-Speed VCSELs [ J ]. Journal of Lightwave Teehnology ,2004,22( 12 ) :2823-2827.
  • 9Gao Jianjun. An Analytical Method to Determine Small-Signal Model Parameter for Vertical-Cavity Surface Emitting Lasers [ J ]. Journal of Lightwave Technology ,2010,28 (9) : 1332-1337.
  • 10梁峰,高建军,田学农.垂直腔面发射激光器的温度模型,2007,28(7):1125-1129.

同被引文献2

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部