TATB基PBX纳米孔隙的正电子湮没寿命谱

Study on Positron Lifetime of Nano-void of TATB-based PBX

为研究压制参数对TATB基高聚物粘结炸药（PB X）微观结构的影响,压制了密度为1.6~1.9 g·cm-3的PBX,采用了正电子湮没寿命谱（PALS）技术表征了其微观结构,讨论了不同压制密度PBX的纳米孔隙的变化。结果显示：压制密度越大,PBX中纳米孔隙浓度越小,平均尺寸越大,这表明压制过程中,PBX界面孔隙不断减小,TATB晶体内部孔隙却不断增大。

TATB-based PBX samples with different densities were prepared by different press process,and their position lifetime spectra were measured.The spectra show that the positronium formation is negligible in TATB-based PBX,therefore the 2-component fit is applicable.The result shows an increasing dimension but decreasing concentration of nano-void during PBX pressing,which means the nano-void in TATB crystalline increased due to the damage and crack under pressure,however the nano-void of intergranular interface decreased.