摘要
针对临近空间单粒子效应进行了数值模型仿真和特征尺寸为0.1μm的反相器电路的脉冲注入模拟研究。数值仿真结果表明器件临界电荷随着工作电压的降低而减小,敏感横截面随着临界电荷的降低而逐渐增大。临近空间微电子器件的单粒子翻转概率随敏感横截面增大而上升,但其又随临近空间高度的增加而下降。此外,利用SPICE软件脉冲注入模拟观察到了反相器电路的单粒子翻转现象。所得结论有助于深入研究临近空间的单粒子效应并为器件抗辐射加固提供了理论依据。
Single event effect in near space is investigated via numerical model simulations and circuit simulation of inverter with feature size 0.1μm.The numerical simulation results show that the critical charge of microelectronics device is decreased with supply voltage and the sensitive cross section is increased with the decrease of the critical charge,which leads to an increased single event upset rate in the device in near space,however single event upset rate is also decreased with the rising of the near space height.Moreover,the single event upset is observed in the inverter with SPICE circuit simulation by the pulse injection.The obtained results are helpful to performing a deeper study of the single event effect in near space and also provide a theory guide for radiation hardened.
出处
《空军工程大学学报（自然科学版）》
CSCD
北大核心
2011年第2期76-80,共5页
Journal of Air Force Engineering University(Natural Science Edition)
基金
空军工程大学科技创新计划资助项目(KGDCXJH0912)
关键词
临近空间
单粒子效应
临界电荷
电路模拟
反相器
near space
single event effect
critical charge
circuit simulation
inverter
