堆积式列阵半导体激光器

Stack Array Semiconductor Lasers

本文介绍堆积式列阵半导体激光器， 着重在ＧａＩｎＡｓＰ／ＩｎＰ 系列激光器。由于它们的Ｔ。小， 受环境温度影响大， 用一般结构制作列阵器件是很困难的。而采用大光腔结构的激光器， 它的Ｔ０ 值可达１００ ～１４０Ｋ， 单个１－３μｍ 激光器，脉冲峰值功率超过３ｗ （ 瓦）［ １］ ， 单个１－５５μｍ 激光器， 脉冲峰值功率超过２ Ｗ［ ２］ 。我们用它们的芯片研制堆积列阵激光器在研制中发现， 列阵的输出功率小于各单元器件输出功率之和； 而减小的比率随着单元数目增加而增加。我们制成３ ×４ 单元的１－３μｍ 列阵激光器， 其脉冲峰值功率大于２４ Ｗ； ４ ×４ 单元的１－５５μｍ 列阵激光器， 它的脉冲峰值功率大于２０ Ｗ。

The stack array semiconductor laser are introduced in this paper especially for the GaInAsP/InP lasers.It is difficult for the GaInAsP/InP lasers to make a common array device, because of their low T 0 and,then,being sensitive to the ambient temperature.For the lasers with large optical cavity structure, the T 0 can be as high as 100-140K and the peak output power in pulsed operation is more than 3W [1] for 1 3μm lasers and 2W for 1 55μm lasers. In making stack arrays with such laser chips,we found that the array output power is less than the sum of power from its constituent lasers.The decreasing rate is increased with the increasing number of coustituent lasers. The pulsed peak power is over 24W for the 3×4 array of 1 3μm lasers and 20W for the 4×4 array of 1 55μm lasers.