摘要
利用改进的液相外延技术生长出了GaAs- GaAlAs 大光腔结构激光器。样品10K 下光荧光谱的峰值波长为926-26nm 。样品的测量结果表明, 样品质量达到了设计要求。利用该材料制作的激光二极管, 峰值输出功率达到15 W。
The GaAlAs/GaAs material with large optical cavity has been grown by LPE method.The experimental results show that photoluminescence′s peak wavelength is 926.26nm at 10K and sample′s quality has reached requirement of design.The peak output of laser diodes with the material is up to 15W.
出处
《长春光学精密机械学院学报》
1999年第2期26-28,共3页
Journal of Changchun Institute of Optics and Fine Mechanics