研究In_(0.82)Ga_(0.18)As/InP的临界厚度

Study of the Critical Thicknees of In_(0.82)Ga_(0.18)As/InP

根据Matthew-Blakeslee和People-Bean的临界厚度理论,利用牛顿迭代公式,使用计算机模拟出高In组分InxGa1-xAs临界厚度的数值解,得出理论上的In0.82Ga0.18As临界厚度.使用低压金属有机化学气相淀积(LP-MOCVD)技术,在InP(100)衬底上分别生长低于临界厚度、等于临界厚度和高于临界厚度的In0.82Ga0.18As低温层,然后在生长条件一致情况下生长In0.82Ga0.18As高温层,分析临界厚度对In0.82Ga0.18As高温层的影响.

According to the theory on critical thickness of Matthew-Blakeslee and People–Bean, using Newton iterative formula, InxGa1-xAs critical thickness with high In components was simulated by computer to get the theoretically In0.82Ga0.18As critical thickness. The In0.82Ga0.18As grown on InP （100） substrates was carried out by low pressure metalorganic chemical vapor deposition （LP-MOCVD）. The thickness of low temperature layer was grown below critical thickness, equal to the critical thickness, and higher than the critical thickness, respectively, then the In0.82Ga0.18As high temperature layer was grown in consistent growing conditions. The effect of critical thickness on In0.82Ga0.18As high temperature layer was analyzed.