铜铟镓硒薄膜太阳电池的应力问题

Stress in CIGS thin film solar cell

分析了CIGS太阳电池的总应力来自于单层膜中的沉积应力及膜层界面间的相互作用。计算得出Mo薄膜与CIGS薄膜界面晶格失配度最大,表明相对于其他界面,该界面的应力值较大。而作为缓冲层的CdS薄膜有效地改善了吸收层CIGS薄膜与窗口层ZnO薄膜的界面应力。而对于柔性衬底材料的PI薄膜,如何解决因其较大的热膨胀系数造成的热应力,将成为制备高效柔性CIGS薄膜电池的关键技术。

The residual stress was analyzed in the CIGS solar cell including stress of each layer and interface stress.The biggest grade of lattice mismatch existed in the interface of Mo/CIGS thin film,which led to the great interface stress.The CdS thin film could relieve effectively the interface stress of CIGS film and ZnO film.The key technology for improved performance of flexible CIGS solar cell was how to release the thermal stress which caused by the high thermal expansion coefficient of PI substrate.