摘要
本文针对传统基准电压的低PSR以及低输出电压的问题,通过采用LDO与带隙基准的混合设计,并且采用BCD工艺,得到了一种可以输出较高参考电压的高PSR(电源抑制)带隙基准。此带隙基准的1.186 V输出电压在低频时PSR为-145 dB,在0～1 GHz频带内,最高PSR为-36 dB。在-50～150℃内,1.186 V基准的温漂为7.5 ppm/℃。
Aiming at the problems of low PSR （Power Supply Rejection） and low output voltage of a traditional reference, by using a combination of LDO and bandgap reference and BCD process, a high PSR bandgap reference with high reference voltage is got. The low frequency PSR of the 1.186V output voltage is -145dB, and the biggest PSR is -36dB in the frequency range of 0-1GHz. The temperature coefficient of the 1.186V is 7.Sppm/℃ in the temperature range of-50-150℃.
出处
《电子设计工程》
2011年第7期169-171,共3页
Electronic Design Engineering
基金
北京市优秀人才资助项目(20061D0500200128)
